Next-generation semiconductor devices for power electronics applications


11 Sept.			09:00 - 10:30

ROOM 17

YOUNGINNOVATION
THE STATE OF RESEARCH COMMUNICATED BY YOUNG RESEARCHERS
TT.I - Technical Multi-Track with Parallel SYMPOSIA
Next-generation semiconductor devices for power electronics applications
Co-organized with iENTRANCE@ENL, CNR-IMM Chair: Simonpietro AGNELLO, University of Palermo
The session will delve into the forefront of semiconductor technology, showcasing innovative advancements that are set to revolutionize the field of power electronics. This session will bring together experts to discuss the latest developments in semiconductor materials, device architectures, and fabrication techniques. This session aims to foster collaboration and knowledge exchange, providing a platform for discussing the future directions of semiconductor technology in power electronics. Participants will leave with a comprehensive understanding of how next-generation semiconductor devices are poised to drive innovation and efficiency in power electronics applications.
The symposium is part of the SE.I
TT.I.H.1 SE.I.1.1	Introductive Keynote Filippo GIANNAZZO - CV CNR-IMM New devices based on 2D materials integrated on wide-bandgap semiconductors
TT.I.H.2 SE.I.1.2	Fiorenza ESPOSITO - CV CNR-IMEM Liquid precursor-based Chemical Vapor Deposition and Transfer of Monolayer MoS₂ on GaN
TT.I.H.3 SE.I.1.3	Francesca MIGLIORE - CV University of Palermo Photoluminescence enhancement in 1L-MoS₂ by thermal treatments
TT.I.H.4 SE.I.1.4	Umberto DELLASETTE - CV CNR-NANOTEC Nanostructured Perovskites: Single Crystals for smart Optics and Optoelectronics
TT.I.H.5 SE.I.1.5	Francesca SANTANGELI - CV Sapienza University of Rome Giant bandgap tuning of InN nanowires by post-growth Hydrogen irradiation for creation of tunable quantum dots