Wide-bandgap semiconductors and heterostructures for power and RF electronics 1/3


11 Sept.			11:30 - 13:00

FRESCOES ROOM

CHIPS & MICRO-NANO ELECTRONICS
TT.II - Technical Multi-Track with Parallel SYMPOSIA
Wide-bandgap semiconductors and heterostructures for power and RF electronics 1/3
Co-organized with IMM-CNR & iENTRANCE@ENL Chair: Filippo GIANNAZZO, IMM-CNR
This session will provide an overview on recent development of SiC, GaN and Ga₂O₃ materials and technology.
The symposium is part of the WS.VII
TT.II.B.1 WS.VII.1.1	Fabrizio ROCCAFORTE - CV CNR-IMM Advanced processing for energy efficient WBG semiconductors power devices: Recent trends and perspectives
TT.II.B.2 WS.VII.1.2	Yvon CORDIER - CV Université Côte d’Azur, CNRS-CRHEA, Valbonne, France Recent advances in Nitride heterostructures for RF and power devices
TT.II.B.3 WS.VII.1.3	Daniel ALQUIER - CV University of Tours, France Laser Annealing A New Strategy For SiC Power Device Contacts
TT.II.B.4 WS.VII.1.4	Roberto FORNARI - CV University of Parma Development and perspectives of Ga₂O₃ epitaxial layers for power electronics