Wide-bandgap semiconductors and heterostructures for power and RF electronics 2/3


11 Sept.			14:00 - 15:30

FRESCOES ROOM

CHIPS & MICRO-NANO ELECTRONICS
TT.III - Technical Multi-Track with Parallel SYMPOSIA
Wide-bandgap semiconductors and heterostructures for power and RF electronics 2/3
Co-organized with IMM-CNR & iENTRANCE@ENL Chair: Luca SERAVALLI, CNR-IMEM
This session will be focused on advanced physical and electrical characterization methods for (U)WBG materials and devices.
The symposium is part of the WS.VII
TT.III.B.1 WS.VII.2.1	Ildiko CORA - CV HUN-REN, Institute for Technical Physics and Materials Science, Hungary Advanced structural characterization of Gallium Oxide by electron microscopy
TT.III.B.2 WS.VII.2.2	Giuseppe GRECO - CV CNR-IMM, Catania Recent findings on Ohmic and Schottky contacts to β-Ga₂O₃
TT.III.B.3 WS.VII.2.3	Manuel FREGOLENT - CV University of Padova Trapping processes in vertical GaN Trench MOSFETs: from experimental analysis to simulations
TT.III.B.4 WS.VII.2.4	Béla PÉCZ - CV HUN-REN, Institute of Technical Physics and Materials Science, Hungary Advanced electron microscopy of WBG semiconductors and their heterostructures with 2D materials