| 11 Sept. |  |
16:00 - 17:30 | ||
| FRESCOES ROOM | |||||||
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| CHIPS & MICRO-NANO ELECTRONICS |
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| TT.IV - Technical Multi-Track with Parallel SYMPOSIA | |||||||
| Wide-bandgap semiconductors and heterostructures for power and RF electronics 3/3 | |||||||
| Co-organized with IMM-CNR & iENTRANCE@ENL Chair: Patrick FIORENZA, IMM-CNR |
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This session will present recent developments in the integration of 2D materials (graphene, MoS2) with Nitride semiconductors. |
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| The symposium is part of the WS.VII |
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| TT.IV.B.1 WS.VII.3.1 |
Luca SERAVALLI - CV CNR-IMEM Recent advances in the liquid precursors chemical vapor deposition (CVD) of MoS2 on SiO2 and on GaN |
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| TT.IV.B.2 WS.VII.3.2 |
Federica BONDINO - CV CNR-IOM Advanced soft-x absorption and photoemission spectroscopy of 2D materials and their heterostructures |
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| TT.IV.B.3 WS.VII.3.3 |
Simonpietro AGNELLO - CV University of Palermo Thermally induced strain and doping of monolayer MoS2 on metal, insulator and WBG substrates |
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| TT.IV.B.4 WS.VII.3.4 |
Salvatore Ethan PANASCI - CV CNR-IMM, Catania Integration strategies and nanoscale electrical characterization of MoS2 on WBG semiconductors |
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