Strain in Semiconductor Materials 1/2


12 Sept.			11:30 - 13:00

FRESCOES ROOM

MICROSCOPY & NANOCHARACTERIZATION

ADVANCED MATERIALS
TT.VI - Technical Multi-Track with Parallel SYMPOSIA
Strain in Semiconductor Materials 1/2
Co-organized with Roma Tre University & Sapienza University of Rome Chair: to be defined, Sapienza University of Rome

The symposium is part of the WS.VIII
TT.VI.C.1 WS.VIII.2.1	Lorenzo MONACELLI - CV Sapienza University of Rome, Italy The origin of out-of-equilibrium ferroelectricity in SrTiO₃ under resonant ultrafast THz pumping
TT.VI.C.2 WS.VIII.2.2	Antonio POLIMENI - CV Sapienza University of Rome, Italy Giant enhancement of light emission from InSe in selectively strained InSe/MS2 (M=Mo,W) heterostructures
TT.VI.C.3 WS.VIII.2.3	Elena STELLINO - CV Sapienza University of Rome, Italy Tuning the Excitonic Response of Monolayer WS₂ Domes via Coupled Pressure and Strain Variation
TT.VI.C.4 WS.VIII.2.4	Pablo HERNANDEZ LOPEZ - CV Humboldt Universitat zu Berlin, Germany Strain tuning of optical properties in 2D semiconductors and optical readout of strain in thin films