Strain in Semiconductor Materials 2/2


12 Sept.			14:00 - 15:30

FRESCOES ROOM

MICROSCOPY & NANOCHARACTERIZATION

ADVANCED MATERIALS
TT.VII - Technical Multi-Track with Parallel SYMPOSIA
Strain in Semiconductor Materials 2/2
Organized and under the coordination of H2020 Project CHALLENGES
Co-organized with Roma Tre University & Sapienza University of Rome Chair: Marco VITTORI ANTISARI, Sapienza University of Rome

The symposium is part of the WS.VIII
TT.VII.C.1 WS.VIII.3.1	Chiara MANCINI - CV Sapienza University of Rome, Italy Strain analysis in semiconductor devices through Tip-Enhanced Raman Spectroscopy
TT.VII.C.2 WS.VIII.3.2	Roberto BALBONI - CV IMM-CNR Measuring crystals strain in the TEM: techniques and accuracy
TT.VII.C.3 WS.VIII.3.3	Frederik OTTO - CV Technische Universität Berlin Analyzing Dynamic Diffraction at Strained Semiconductor Interfaces: A Method to Determine Alloy Concentrations
TT.VII.C.4 WS.VIII.3.4	Stefan WUNDRACK - CV Physikalisch-Technische Bundesanstalt, Germany Metrological Raman shift calibration for strain quantification in semiconductor
TT.VII.C.5 WS.VIII.3.5	Stefano LUPI Sapienza University of Rome, Italy Optoelectronic Properties of Topological Quantum Materials