-

    updated on August 9, 2024

WS.VII - WBG Semiconductors & Heterostructures

updated on September 11, 2024

 FRESCOES ROOM

WS.VII

WIDE-BANDGAP SEMICONDUCTORS AND HETEROSTRUCTURES FOR POWER AND RF ELECTRONICS

September 11

Co-organized with:
IMM iENTRANCE logo FINALE

WORKSHOP COMMITTEE

Filippo GIANNAZZO, IMM-CNR
Patrick FIORENZA, IMM-CNR

Due to their outstanding physical properties, wide-bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are the materials of choice for high-power and high frequency electronics, with a broad range of applications in strategic fields, like electric vehicles, power conversion for renewable energies, aerospace, telecommunications.
Owing to this strategic role, European Union recently funded, through the Chips-JU, the realization of a Pilot line dedicated to WBG semiconductor technology. This workshop will provide an opportunity for companies, R&I centres, and universities to learn about recent developments and open challenges in WBG and ultra-WBG (Ga2O3) materials and technology. Advanced characterization methods specifically optimized for these material systems and related devices will be presented. Finally, new opportunities offered by the integration of 2D materials (graphene, MoS2) with WBG semiconductors will be discussed.

 
September 11
11:30 - 13:00
Wide-bandgap semiconductors and heterostructures for power and RF electronics 1/3
WS.VII.1 - TT.II.B
Chair: Filippo GIANNAZZO, IMM-CNR Co-organized with IMM-CNR & iENTRANCE@ENL
This session will provide an overview on recent development of SiC, GaN and Ga2O3 materials and technology.
WS.VII.1.1
TT.II.B.1
Fabrizio ROCCAFORTE - CV
CNR-IMM, Catania
Advanced processing for energy efficient WBG semiconductors power devices: Recent trends and perspectives
!UOMO PPT eceded
WS.VII.1.2
TT.II.B.2
Yvon CORDIER - CV
Université Côte d’Azur, CNRS-CRHEA, Valbonne, France
Recent advances in Nitride heterostructures for RF and power devices
!UOMO PPT eceded
WS.VII.1.3
TT.II.B.3
Daniel ALQUIER - CV
University of Tours, France
Laser Annealing A New Strategy For SiC Power Device Contacts
!UOMO PPT eceded
WS.VII.1.4
TT.II.B.4
Roberto FORNARI - CV
University of Parma
Development and perspectives of Ga2O3 epitaxial layers for power electronics
!NEUTRO PPT eceded
 
14:00 - 15:30
Wide-bandgap semiconductors and heterostructures for power and RF electronics 2/3
WS.VII.2 - TT.III.B
Chair: Luca SERAVALLI, CNR-IMEMCo-organized with IMM-CNR & iENTRANCE@ENL
This session will be focused on advanced physical and electrical characterization methods for (U)WBG materials and devices.
WS.VII.2.1
TT.III.B.1
Ildiko CORA - CV
HUN-REN, Institute for Technical Physics and Materials Science, Hungary
Advanced structural characterization of Gallium Oxide by electron microscopy
!UOMO PPT eceded
WS.VII.2.2
TT.III.B.2
Giuseppe GRECO - CV
CNR-IMM, Catania
Recent findings on Ohmic and Schottky contacts to β-Ga2O3
!NEUTRO PPT eceded
WS.VII.2.3
TT.III.B.3
Manuel FREGOLENT - CV
University of Padova
Trapping processes in vertical GaN Trench MOSFETs: from experimental analysis to simulations
!NEUTRO PPT eceded
WS.VII.2.4
TT.III.B.4
Béla PÉCZ - CV
HUN-REN, Institute of Technical Physics and Materials Science, Hungary
Advanced electron microscopy of WBG semiconductors and their heterostructures with 2D materials
!NEUTRO PPT eceded
 
16:00 - 17:30
Wide-bandgap semiconductors and heterostructures for power and RF electronics 3/3
WS.VII.3 - TT.IV.B
Chair: Patrick FIORENZA, IMM-CNR & iENTRANCE@ENL
This session will present recent developments in the integration of 2D materials (graphene, MoS2) with Nitride semiconductors.
WS.VII.3.1
TT.IV.B.1 
Luca SERAVALLI - CV
CNR-IMEM, Parma
Recent advances in the liquid precursors chemical vapor deposition (CVD) of MoS2 on SiO2 and on GaN
!NEUTRO PPT eceded
WS.VII.3.1
TT.IV.B.1 
Federica BONDINO - CV
CNR-IOM, Trieste
Advanced soft-x absorption and photoemission spectroscopy of 2D materials and their heterostructures
!UOMO PPT eceded
WS.VII.3.1
TT.IV.B.1 
Simonpietro AGNELLO - CV
University of Palermo
Thermally induced strain and doping of monolayer MoS2 on metal, insulator and WBG substrates
!UOMO PPT eceded
WS.VII.3.1
TT.IV.B.1 
Salvatore Ethan PANASCI - CV
CNR-IMM, Catania
Integration strategies and nanoscale electrical characterization of MoS2 on WBG semiconductors
!UOMO PPT eceded
 

 

 
freccia SX f54 Back to Overview Go to Plan 11 September freccia DX f54
 

 

INFO & CONTACTS

Dr. Federica SCROFANI

Tel. +39 06 49766676
Mob. +39 339 7714107
email: This email address is being protected from spambots. You need JavaScript enabled to view it.