WS.VII - WBG Semiconductors & Heterostructures

updated on July 24, 2024


WS.VII WIDE-BANDGAP SEMICONDUCTORS AND HETEROSTRUCTURES FOR POWER AND RF ELECTRONICS September 11
*Co-organized with:*

WORKSHOP COMMITTEE Filippo GIANNAZZO, IMM-CNR Patrick FIORENZA, IMM-CNR
Due to their outstanding physical properties, wide-bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are the materials of choice for high-power and high frequency electronics, with a broad range of applications in strategic fields, like electric vehicles, power conversion for renewable energies, aerospace, telecommunications, owing to this strategic role, European Union recently funded, through the Chips-JU, the realization of a Pilot line dedicated to WBG semiconductor technology. This workshop will provide an opportunity for companies, R&I centres, and universities to learn about recent developments and open challenges in WBG and ultra-WBG (Ga2O3) materials and technology. Advanced characterization methods specifically optimized for these material systems and related devices will be presented. Finally, new opportunities offered by the integration of 2D materials (graphene, MoS2) with WBG semiconductors will be discussed.

September 11
11:30 - 13:00 Wide-bandgap semiconductors and heterostructures for power and RF electronics part I WS.VII.1 - TT.II.B
Chair: Filippo GIANNAZZO, IMM-CNR
This session will provide an overview on recent development of SiC, GaN and Ga₂O₃ materials and technology.
WS.VII.1.1 TT.II.B.1	Fabrizio ROCCAFORTE - CV CNR-IMM Advanced processing for energy efficient WBG semiconductors power devices: Recent trends and perspectives
WS.VII.1.2 TT.II.B.2	Yvon CORDIER - CV Université Côte d’Azur, CNRS-CRHEA, Valbonne, France Recent advances in Nitride heterostructures for RF and power devices
WS.VII.1.3 TT.II.B.3	Daniel ALQUIER - CV University of Tours, France Laser Annealing A New Strategy For SiC Power Device Contacts
WS.VII.1.4 TT.II.B.4	Roberto FORNARI - CV University of Parma Development and perspectives of Ga₂O₃ epitaxial layers for power electronics

14:00 - 15:30 Wide-bandgap semiconductors and heterostructures for power and RF electronics part II WS.VII.2 - TT.III.B
Chair: Luca SERAVALLI, CNR-IMEM
This session will be focused on advanced physical and electrical characterization methods for (U)WBG materials and devices.
WS.VII.2.1 TT.III.B.1	Ildiko CORA - CV HUN-REN, Institute for Technical Physics and Materials Science, Hungary Advanced structural characterization of Gallium Oxide by electron microscopy
WS.VII.2.2 TT.III.B.2	Giuseppe GRECO CNR-IMM To be defined
WS.VII.2.3 TT.III.B.3	to be defined
WS.VII.2.4 TT.III.B.4	Béla PÉCZ HUN-REN, Institute of Technical Physics and Materials Science, Hungary Advanced electron microscopy of WBG semiconductors and their heterostructures with 2D materials

16:00 - 17:30 Wide-bandgap semiconductors and heterostructures for power and RF electronics part III WS.VII.3 - TT.IV.B
Chair: Patrick FIORENZA, IMM-CNR
This session will present recent developments in the integration of 2D materials (graphene, MoS₂) with Nitride semiconductors.
WS.VII.3.1 TT.IV.B.1	Luca SERAVALLI - CV CNR-IMEM Recent advances in the liquid precursors chemical vapor deposition (CVD) of MoS₂ on SiO₂ and on GaN
WS.VII.3.1 TT.IV.B.1	Federica BONDINO - CV CNR-IOM Advanced soft-x absorption and photoemission spectroscopy of 2D materials and their heterostructures
WS.VII.3.1 TT.IV.B.1	Simonpietro AGNELLO - CV University of Palermo Thermally induced strain and doping of monolayer MoS 2 on metal, insulator and WBG substrates
WS.VII.3.1 TT.IV.B.1	Salvatore Ethan PANASCI CNR-IMM Integration strategies, processing and nanoscale electrical characterization of MoS 2 on WBG semiconductors